| Anzahl | Preis |
|---|---|
| 1+ | 20.91 EUR |
| 10+ | 15.28 EUR |
| 25+ | 15.24 EUR |
| 50+ | 15.22 EUR |
| 100+ | 12.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGOT60R070D1AUMA3 Infineon Technologies
Description: GANFET N-CH, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 20-PowerSOIC (0.433", 11.00mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-DSO-20-87, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc).
Weitere Produktangebote IGOT60R070D1AUMA3 nach Preis ab 12.33 EUR bis 23.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IGOT60R070D1AUMA3 | Infineon Technologies |
 Description: GANFET N-CHInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Active Supplier Device Package: PG-DSO-20-87 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 789 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IGOT60R070D1AUMA3 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.11 EUR |
| 10+ | 16.21 EUR |
| 100+ | 12.33 EUR |