| Anzahl | Preis |
|---|---|
| 1+ | 18.44 EUR |
| 10+ | 15.01 EUR |
| 100+ | 12.51 EUR |
| 500+ | 11.35 EUR |
| 800+ | 9.64 EUR |
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Technische Details IGOT65R025D2AUMA1 Infineon Technologies
Description: IGOT65R025D2AUMA1, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): -10V, Supplier Device Package: PG-DSO-20-91, Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Power Dissipation (Max): 184W (Tc), Current - Continuous Drain (Id) @ 25°C: 61A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 20-BFSOP (0.295", 7.50mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V.
Weitere Produktangebote IGOT65R025D2AUMA1 nach Preis ab 11.21 EUR bis 18.67 EUR
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IGOT65R025D2AUMA1 | Infineon Technologies |
 Description: IGOT65R025D2AUMA1Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-DSO-20-91 Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Power Dissipation (Max): 184W (Tc) Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGOT65R025D2AUMA1 |
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Hersteller: Infineon Technologies
Description: IGOT65R025D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Power Dissipation (Max): 184W (Tc)
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IGOT65R025D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Power Dissipation (Max): 184W (Tc)
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.67 EUR |
| 10+ | 13 EUR |
| 100+ | 11.21 EUR |