| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.18 EUR |
| 10+ | 14.22 EUR |
| 100+ | 11.85 EUR |
| 500+ | 10.56 EUR |
| 800+ | 9.4 EUR |
| 2400+ | 9.38 EUR |
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Technische Details IGOT65R035D2AUMA1 Infineon Technologies
Description: GANFET N-CH 650V 44A 20BFSOP, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 13A, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V.
Weitere Produktangebote IGOT65R035D2AUMA1 nach Preis ab 10.56 EUR bis 19.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IGOT65R035D2AUMA1 | Infineon Technologies |
 Description: GANFET N-CH 650V 44A 20BFSOPPackaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 13A Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IGOT65R035D2AUMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Description: GANFET N-CH 650V 44A 20BFSOP
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 13A
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
auf Bestellung 744 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.87 EUR |
| 10+ | 13.7 EUR |
| 100+ | 10.56 EUR |