auf Bestellung 781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.28 EUR |
| 10+ | 11.95 EUR |
| 100+ | 9.96 EUR |
| 500+ | 8.87 EUR |
| 800+ | 7.9 EUR |
| 2400+ | 7.88 EUR |
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Technische Details IGOT65R035D2AUMA1 Infineon Technologies
Description: IGOT65R035D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V.
Weitere Produktangebote IGOT65R035D2AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IGOT65R035D2AUMA1 | Hersteller : Infineon Technologies |
 Description: IGOT65R035D2AUMA1Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
Produkt ist nicht verfügbar |
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IGOT65R035D2AUMA1 | Hersteller : Infineon Technologies |
Description: IGOT65R035D2AUMA1 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
Produkt ist nicht verfügbar |