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IGOT65R035D2AUMA1

IGOT65R035D2AUMA1 Infineon Technologies


Infineon_IGOT65R035D2_DataSheet_v01_00_EN-3518111.pdf Hersteller: Infineon Technologies
GaN FETs
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Technische Details IGOT65R035D2AUMA1 Infineon Technologies

Description: IGOT65R035D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V.

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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Hersteller : Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Hersteller : Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH