| Anzahl | Preis |
|---|---|
| 1+ | 17.97 EUR |
| 10+ | 14.52 EUR |
| 25+ | 13.52 EUR |
| 50+ | 12.92 EUR |
| 100+ | 12.39 EUR |
| 250+ | 11.77 EUR |
| 500+ | 11.25 EUR |
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Technische Details IGOT65R045D2AUMA1 Infineon Technologies
Description: IGOT65R045D2AUMA1, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): -10V, Supplier Device Package: PG-DSO-20-91, Vgs(th) (Max) @ Id: 1.6V @ 3.3mA, Power Dissipation (Max): 109W (Tc), Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 20-BFSOP (0.295", 7.50mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IGOT65R045D2AUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IGOT65R045D2AUMA1 | Infineon Technologies |
 Description: IGOT65R045D2AUMA1Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-DSO-20-91 Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Power Dissipation (Max): 109W (Tc) Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
IGOT65R045D2AUMA1 | Infineon Technologies |
Description: IGOT65R045D2AUMA1 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-DSO-20-91 Vgs(th) (Max) @ Id: 1.6V @ 3.3mA Power Dissipation (Max): 109W (Tc) Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-BFSOP (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGOT65R045D2AUMA1 |
|
Hersteller: Infineon Technologies
Description: IGOT65R045D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Power Dissipation (Max): 109W (Tc)
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IGOT65R045D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Power Dissipation (Max): 109W (Tc)
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGOT65R045D2AUMA1 |
|
Hersteller: Infineon Technologies
Description: IGOT65R045D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Power Dissipation (Max): 109W (Tc)
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IGOT65R045D2AUMA1
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-91
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Power Dissipation (Max): 109W (Tc)
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH