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IGOT65R045D2AUMA1

IGOT65R045D2AUMA1 Infineon Technologies


Infineon_IGOT65R045D2_DataSheet_v01_00_EN-3518098.pdf Hersteller: Infineon Technologies
GaN FETs
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Lieferzeit 136-140 Tag (e)
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1+17.97 EUR
10+14.52 EUR
25+13.52 EUR
50+12.92 EUR
100+12.39 EUR
250+11.77 EUR
500+11.25 EUR
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Technische Details IGOT65R045D2AUMA1 Infineon Technologies

Description: IGOT65R045D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Power Dissipation (Max): 109W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 3.3mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V.

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IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Hersteller : Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Hersteller : Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH