IGP50N60T Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGP50N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 111+ | 4.35 EUR |
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Technische Details IGP50N60T Infineon Technologies
Description: IGP50N60 - DISCRETE IGBT WITHOUT, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: PG-TO220-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/299ns, Switching Energy: 1.2mJ (on), 1.4mJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 310 nC, Part Status: Active, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 333 W.
Weitere Produktangebote IGP50N60T nach Preis ab 3.48 EUR bis 6.74 EUR
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IGP50N60T | Hersteller : Infineon Technologies |
IGBT Transistors LOW LOSS IGBT TECH 600V 50A |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
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