IGT40R070D1E8220ATMA1 Infineon Technologies

Description: GAN N-CH 400V 31A HSOF-8-3, Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±10V, Part Status: Obsolete, Supplier Device Package: PG-HSOF-8-3, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: 0°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR).