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Technische Details IGT60R070D1ATMA1 Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-HSOF-8-3, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V.
Weitere Produktangebote IGT60R070D1ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IGT60R070D1ATMA1 | Infineon Technologies |
 Description: GANFET N-CH 600V 31A 8HSOFMounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-HSOF-8-3 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IGT60R070D1ATMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 8HSOF Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Obsolete Supplier Device Package: PG-HSOF-8-3 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IGT60R070D1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 125W Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Kind of package: tape Kind of channel: enhancement Gate charge: 5.8nC Kind of transistor: HEMT Gate current: 20mA Pulsed drain current: 60A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IGT60R070D1ATMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Description: GANFET N-CH 600V 31A 8HSOF
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGT60R070D1ATMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: GANFET N-CH 600V 31A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGT60R070D1ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 125W
Case: PG-HSOF-8-3
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: tape
Kind of channel: enhancement
Gate charge: 5.8nC
Kind of transistor: HEMT
Gate current: 20mA
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH