IGT60R070D1ATMA1 Infineon Technologies

Description: GANFET N-CH 600V 31A 8HSOF, Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-HSOF-8-3, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V.