| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.82 EUR |
| 10+ | 17.83 EUR |
| 50+ | 17.8 EUR |
| 100+ | 14.08 EUR |
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Technische Details IGT60R070D1ATMA4 Infineon Technologies
Description: GANFET N-CH, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-HSOF-8-3, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc), Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel.
Weitere Produktangebote IGT60R070D1ATMA4 nach Preis ab 15.33 EUR bis 40.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IGT60R070D1ATMA4 | Infineon Technologies |
 Description: GANFET N-CHInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Active Supplier Device Package: PG-HSOF-8-3 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 2017 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| IGT60R070D1ATMA4 | Infineon Technologies |
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| IGT60R070D1ATMA4 | Infineon Technologies |
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IGT60R070D1ATMA4 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.84 EUR |
| 10+ | 17.39 EUR |
| 100+ | 15.33 EUR |
| IGT60R070D1ATMA4 |
|
Hersteller: Infineon Technologies
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 40.56 EUR |
| 10+ | 36.93 EUR |
| 25+ | 35.77 EUR |
| 100+ | 30.26 EUR |
| IGT60R070D1ATMA4 |
|
Hersteller: Infineon Technologies
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 40.56 EUR |
| 10+ | 36.13 EUR |
| 25+ | 34.45 EUR |
| 100+ | 28.66 EUR |