IGT65R025D2ATMA1 Infineon Technologies
auf Bestellung 1263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.65 EUR |
| 10+ | 22.00 EUR |
| 25+ | 20.56 EUR |
| 50+ | 19.68 EUR |
| 100+ | 18.88 EUR |
| 250+ | 17.97 EUR |
| 500+ | 17.20 EUR |
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Technische Details IGT65R025D2ATMA1 Infineon Technologies
Description: IGT65R025D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Power Dissipation (Max): 236W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Supplier Device Package: PG-HSOF-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V.
Weitere Produktangebote IGT65R025D2ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IGT65R025D2ATMA1 | Hersteller : Infineon Technologies |
 IGT65R025D2ATMA1 |
Produkt ist nicht verfügbar |
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| IGT65R025D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGT65R025D2ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-HSOF-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
Produkt ist nicht verfügbar |
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| IGT65R025D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGT65R025D2ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-HSOF-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
Produkt ist nicht verfügbar |