IGT65R035D2ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 16.26 EUR |
| 10+ | 11.49 EUR |
| 100+ | 8.54 EUR |
| 1000+ | 7.43 EUR |
| 2000+ | 7.25 EUR |
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Technische Details IGT65R035D2ATMA1 Infineon Technologies
Description: HV GAN DISCRETES, Vgs (Max): -10V, Supplier Device Package: PG-HSOF-8, Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Power Dissipation (Max): 167W (Tc), Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IGT65R035D2ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IGT65R035D2ATMA1 | Infineon Technologies |
Description: HV GAN DISCRETES Vgs (Max): -10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Drain to Source Voltage (Vdss): 650 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IGT65R035D2ATMA1 | Infineon Technologies |
Description: HV GAN DISCRETES Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGT65R035D2ATMA1 |
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Description: HV GAN DISCRETES
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGT65R035D2ATMA1 |
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: HV GAN DISCRETES
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH