IGT65R035D2ATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.35 EUR |
| 10+ | 13.67 EUR |
| 100+ | 10.16 EUR |
| 1000+ | 8.84 EUR |
| 2000+ | 8.63 EUR |
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Technische Details IGT65R035D2ATMA1 Infineon Technologies
Description: GANFET N-CH 650V 49A 8PSFN, Vgs (Max): -10V, Supplier Device Package: PG-HSOF-8, Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Power Dissipation (Max): 167W (Tc), Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IGT65R035D2ATMA1 nach Preis ab 10.34 EUR bis 19.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IGT65R035D2ATMA1 | Infineon Technologies |
 Description: GANFET N-CH 650V 49A 8PSFNInput Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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| IGT65R035D2ATMA1 |
|
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 49A 8PSFN
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: GANFET N-CH 650V 49A 8PSFN
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.65 EUR |
| 10+ | 13.52 EUR |
| 100+ | 10.34 EUR |