IGT65R055D2ATMA1 Infineon Technologies
auf Bestellung 1291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.61 EUR |
| 10+ | 7.36 EUR |
| 100+ | 5.95 EUR |
| 500+ | 5.3 EUR |
| 1000+ | 5.14 EUR |
| 2000+ | 4.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IGT65R055D2ATMA1 Infineon Technologies
Description: IGT65R055D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-HSOF-8-3, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V.
Weitere Produktangebote IGT65R055D2ATMA1 nach Preis ab 4.96 EUR bis 10.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IGT65R055D2ATMA1 | Hersteller : Infineon Technologies |
 Description: IGT65R055D2ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
auf Bestellung 653 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
|
|
IGT65R055D2ATMA1 | Hersteller : Infineon Technologies |
Description: IGT65R055D2ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
Produkt ist nicht verfügbar |