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IGT65R140D2ATMA1

IGT65R140D2ATMA1 Infineon Technologies

Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 650 V G5
auf Bestellung 1393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.74 EUR
10+3.77 EUR
100+2.76 EUR
500+2.46 EUR
1000+2.39 EUR
2000+2.02 EUR
4000+1.99 EUR
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Technische Details IGT65R140D2ATMA1 Infineon Technologies

Description: IGT65R140D2ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: PG-HSOF-8-3, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V.

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IGT65R140D2ATMA1 IGT65R140D2ATMA1 Hersteller : Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
auf Bestellung 1926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+3.77 EUR
100+2.64 EUR
500+2.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGT65R140D2ATMA1 IGT65R140D2ATMA1 Hersteller : Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH