IGU04N60TAKMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH 600V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/164ns
Switching Energy: 61µJ (on), 84µJ (off)
Test Condition: 400V, 4A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 42 W
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.88 EUR |
| 75+ | 0.82 EUR |
| 150+ | 0.73 EUR |
| 525+ | 0.6 EUR |
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Technische Details IGU04N60TAKMA1 Infineon Technologies
Description: IGBT TRENCH 600V 8A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A, Supplier Device Package: PG-TO251-3, IGBT Type: Trench, Td (on/off) @ 25°C: 14ns/164ns, Switching Energy: 61µJ (on), 84µJ (off), Test Condition: 400V, 4A, 47Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 42 W.
Weitere Produktangebote IGU04N60TAKMA1 nach Preis ab 0.71 EUR bis 1.99 EUR
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IGU04N60TAKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 4A; 42W; TO251 Type of transistor: IGBT Power dissipation: 42W Case: TO251 Mounting: THT Gate charge: 27nC Kind of package: tube Collector-emitter voltage: 600V Technology: TRENCHSTOP™ Turn-on time: 21ns Turn-off time: 207ns Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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IGU04N60TAKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 4A; 42W; TO251 Type of transistor: IGBT Power dissipation: 42W Case: TO251 Mounting: THT Gate charge: 27nC Kind of package: tube Collector-emitter voltage: 600V Technology: TRENCHSTOP™ Turn-on time: 21ns Turn-off time: 207ns Collector current: 4A Pulsed collector current: 12A Gate-emitter voltage: ±20V |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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IGU04N60TAKMA1 | Hersteller : INFINEON |
Description: INFINEON - IGU04N60TAKMA1 - IGBT, 9.5 A, 1.5 V, 42 W, 600 V, TO-251, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V usEccn: EAR99 euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-251 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 9.5A SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 303 Stücke: Lieferzeit 14-21 Tag (e) |
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IGU04N60TAKMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 8A 42000mW 3-Pin(3+Tab) TO-251 Tube |
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IGU04N60TAKMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 8A 42W 3-Pin(3+Tab) TO-251 Tube |
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| IGU04N60TAKMA1 | Hersteller : Infineon Technologies |
IGBT Transistors HOME APPLIANCES 14 |
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