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IGW03N120H2FKSA1

IGW03N120H2FKSA1 Infineon Technologies


igb03n120h2_rev2_4g.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-247 Tube
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Technische Details IGW03N120H2FKSA1 Infineon Technologies

Description: IGBT 1200V 9.6A 62.5W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO247-3-1, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.

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IGW03N120H2FKSA1 Hersteller : INFINEON TECHNOLOGIES IGW03N120H2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 9.6A; 62.5W; TO247-3; Eoff: 290uJ
Type of transistor: IGBT
Power dissipation: 62.5W
Case: TO247-3
Mounting: THT
Turn-on switching energy: 0.29mJ
Turn-off switching energy: 290µJ
Collector current: 9.6A
Pulsed collector current: 9.9A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.2kV
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+2.16 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IGW03N120H2FKSA1 IGW03N120H2FKSA1 Hersteller : Infineon Technologies IGW03N120H2.pdf Description: IGBT 1200V 9.6A 62.5W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IGW03N120H2FKSA1 Hersteller : Infineon Technologies IGW03N120H2.pdf IGBT Transistors INDUSTRY 14
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