Technische Details IGW30N60TP Infineon technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT, Power - Max: 200 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 53 A, Part Status: Active, Gate Charge: 130 nC, Test Condition: 400V, 30A, 10.5Ohm, 15V, Switching Energy: 710µJ (on), 420µJ (off), Td (on/off) @ 25°C: 15ns/179ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Weitere Produktangebote IGW30N60TP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IGW30N60TP | Infineon Technologies |
 Description: IGW30N60 - DISCRETE IGBT WITHOUTPower - Max: 200 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 53 A Part Status: Active Gate Charge: 130 nC Test Condition: 400V, 30A, 10.5Ohm, 15V Switching Energy: 710µJ (on), 420µJ (off) Td (on/off) @ 25°C: 15ns/179ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3 Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
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 |
IGW30N60TPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 90A Turn-on time: 38ns Turn-off time: 279ns Gate-emitter voltage: ±20V Collector current: 38A Collector-emitter voltage: 600V Power dissipation: 100W Gate charge: 130nC Technology: TRENCHSTOP™ |
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Im Einkaufswagen Stück im Wert von UAH |
| IGW30N60TP |
|
Hersteller: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IGW30N60 - DISCRETE IGBT WITHOUT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGW30N60TPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 38ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 600V
Power dissipation: 100W
Gate charge: 130nC
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 38ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
Collector current: 38A
Collector-emitter voltage: 600V
Power dissipation: 100W
Gate charge: 130nC
Technology: TRENCHSTOP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH