IGW30N60TP Infineon technologies


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Technische Details IGW30N60TP Infineon technologies

Description: IGW30N60 - DISCRETE IGBT WITHOUT, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/179ns, Switching Energy: 710µJ (on), 420µJ (off), Test Condition: 400V, 30A, 10.5Ohm, 15V, Gate Charge: 130 nC, Part Status: Active, Current - Collector (Ic) (Max): 53 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 200 W.

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IGW30N60TP IGW30N60TP Hersteller : Infineon Technologies INFN-S-A0002837998-1.pdf?t.download=true&u=5oefqw Description: IGW30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
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