IGW30N60TP Infineon technologies

Description: IGW30N60 - DISCRETE IGBT WITHOUT, Power - Max: 200 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 53 A, Part Status: Active, Gate Charge: 130 nC, Test Condition: 400V, 30A, 10.5Ohm, 15V, Switching Energy: 710µJ (on), 420µJ (off), Td (on/off) @ 25°C: 15ns/179ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.