IGZ100N65H5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH 650V 161A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/421ns
Switching Energy: 850µJ (on), 770µJ (off)
Test Condition: 400V, 50A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 161 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 536 W
auf Bestellung 1718 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 7.1 EUR |
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Technische Details IGZ100N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 161A TO247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 30ns/421ns, Switching Energy: 850µJ (on), 770µJ (off), Test Condition: 400V, 50A, 8Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 161 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 536 W.
Weitere Produktangebote IGZ100N65H5XKSA1 nach Preis ab 7.99 EUR bis 11.9 EUR
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 161A 536000mW 4-Pin(4+Tab) TO-247 Tube |
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IGZ100N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 Anzahl je Verpackung: 1 Stücke |
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IGZ100N65H5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 161A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 30ns/421ns Switching Energy: 850µJ (on), 770µJ (off) Test Condition: 400V, 50A, 8Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 161 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 536 W |
Produkt ist nicht verfügbar |
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IGZ100N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5 Manufacturer series: H5 Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 101A Pulsed collector current: 400A Turn-on time: 40ns Turn-off time: 485ns Type of transistor: IGBT Power dissipation: 268W Kind of package: tube Gate charge: 0.21µC Technology: TRENCHSTOP™ 5 Mounting: THT Case: TO247-4 |
Produkt ist nicht verfügbar |