auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.21 EUR |
| 10+ | 10.82 EUR |
| 25+ | 6.67 EUR |
| 100+ | 5.74 EUR |
| 240+ | 5.72 EUR |
| 480+ | 5.26 EUR |
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Technische Details IGZ75N65H5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 119A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 26ns/347ns, Switching Energy: 680µJ (on), 430µJ (off), Test Condition: 400V, 37.5A, 10Ohm, 15V, Gate Charge: 166 nC, Part Status: Active, Current - Collector (Ic) (Max): 119 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 395 W.
Weitere Produktangebote IGZ75N65H5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IGZ75N65H5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 119A 395000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGZ75N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 197W Gate charge: 166nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 37ns Turn-off time: 415ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IGZ75N65H5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 119A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/347ns Switching Energy: 680µJ (on), 430µJ (off) Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 119 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
Produkt ist nicht verfügbar |
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IGZ75N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Case: TO247-4 Mounting: THT Kind of package: tube Power dissipation: 197W Gate charge: 166nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 37ns Turn-off time: 415ns |
Produkt ist nicht verfügbar |