Technische Details IHW40N65R6XKSA1 Infineon Technologies
Description: IGBT 650V 83A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 99 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 17ns/211ns, Switching Energy: 1.1mJ (on), 420µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 159 nC, Part Status: Active, Current - Collector (Ic) (Max): 83 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 210 W.
Weitere Produktangebote IHW40N65R6XKSA1 nach Preis ab 2.34 EUR bis 8.25 EUR
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IHW40N65R6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Infineon Technologies |
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package |
auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N65R6XKSA1 | INFINEON |
Description: INFINEON - IHW40N65R6XKSA1 - IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.29V usEccn: EAR99 euEccn: NLR Verlustleistung: 210W Bauform - Transistor: TO-247 Dauerkollektorstrom: 83A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 166 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 83A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| IHW40N65R6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.74 EUR |
| 28+ | 3.06 EUR |
| 30+ | 3.05 EUR |
| IHW40N65R6XKSA1 |
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Hersteller: Infineon Technologies
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.52 EUR |
| 10+ | 4.55 EUR |
| 100+ | 3.58 EUR |
| 480+ | 3 EUR |
| 1200+ | 2.68 EUR |
| 2640+ | 2.57 EUR |
| 5040+ | 2.34 EUR |
| IHW40N65R6XKSA1 |
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Hersteller: INFINEON
Description: INFINEON - IHW40N65R6XKSA1 - IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.29V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 210W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 83A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IHW40N65R6XKSA1 - IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.29V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 210W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 83A
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 7.65 EUR |
| 61+ | 3.86 EUR |
| 100+ | 2.89 EUR |
| IHW40N65R6XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.25 EUR |
| 30+ | 4.51 EUR |
| 120+ | 3.69 EUR |





