IHW40N65R6XKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 201 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.76 EUR |
| 26+ | 2.82 EUR |
| 27+ | 2.66 EUR |
| 30+ | 2.59 EUR |
| 240+ | 2.56 EUR |
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Technische Details IHW40N65R6XKSA1 INFINEON TECHNOLOGIES
Description: IGBT 650V 83A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 99 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 17ns/211ns, Switching Energy: 1.1mJ (on), 420µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 159 nC, Part Status: Active, Current - Collector (Ic) (Max): 83 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 210 W.
Weitere Produktangebote IHW40N65R6XKSA1 nach Preis ab 2.31 EUR bis 5.98 EUR
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IHW40N65R6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 105W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 159nC Kind of package: tube Turn-on time: 36ns Turn-off time: 256ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
IGBT with Monolithic Integrated Diode |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 83A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package |
auf Bestellung 322 Stücke: Lieferzeit 10-14 Tag (e) |
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IHW40N65R6XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IHW40N65R6XKSA1 - IGBT, 83 A, 1.29 V, 210 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.29V usEccn: EAR99 euEccn: NLR Verlustleistung: 210W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 83A SVHC: No SVHC (27-Jun-2018) |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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| IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
SP005399488 |
Produkt ist nicht verfügbar |
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IHW40N65R6XKSA1 | Hersteller : Infineon Technologies |
IGBT with Monolithic Integrated Diode |
Produkt ist nicht verfügbar |