IKA08N65ET6XKSA1 Infineon Technologies
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.83 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.88 EUR |
| 250+ | 1.46 EUR |
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Technische Details IKA08N65ET6XKSA1 Infineon Technologies
Description: HOME APPLIANCES 14, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A, Supplier Device Package: PG-TO220-3-FP, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/59ns, Switching Energy: 110µJ (on), 40µJ (off), Test Condition: 400V, 5A, 47Ohm, 15V, Gate Charge: 17 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 25 A, Power - Max: 33 W.
Weitere Produktangebote IKA08N65ET6XKSA1 nach Preis ab 1.56 EUR bis 4.46 EUR
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IKA08N65ET6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 7A; 17W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 17W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 25A Mounting: THT Gate charge: 22nC Kind of package: tube Manufacturer series: T6 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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IKA08N65ET6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 7A; 17W; TO220FP; T6 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 17W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 25A Mounting: THT Gate charge: 22nC Kind of package: tube Manufacturer series: T6 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA08N65ET6XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 11A 33000mW 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA08N65ET6XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKA08N65ET6XKSA1 - IGBT, 11 A, 1.5 V, 33 W, 650 V, TO-220, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 33W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP IGBT6 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 11A SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 470 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA08N65ET6XKSA1 | Hersteller : Infineon Technologies |
Description: HOME APPLIANCES 14 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A Supplier Device Package: PG-TO220-3-FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/59ns Switching Energy: 110µJ (on), 40µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 17 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 25 A Power - Max: 33 W |
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