IKB06N60TATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH FS 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.76 EUR |
| 10+ | 2.3 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.55 EUR |
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Technische Details IKB06N60TATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 123 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 9ns/130ns, Switching Energy: 200µJ, Test Condition: 400V, 6A, 23Ohm, 15V, Gate Charge: 42 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 18 A, Power - Max: 88 W.
Weitere Produktangebote IKB06N60TATMA1 nach Preis ab 1.83 EUR bis 4.06 EUR
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IKB06N60TATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 600V 6A |
auf Bestellung 945 Stücke: Lieferzeit 14-28 Tag (e) |
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IKB06N60TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB06N60TATMA1 - IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V usEccn: EAR99 euEccn: NLR Verlustleistung: 88W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP IGBT3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 12A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB06N60TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB06N60TATMA1 - IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V usEccn: EAR99 euEccn: NLR Verlustleistung: 88W Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Kontinuierlicher Kollektorstrom: 12A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 917 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB06N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB06N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKB06N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 123 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9ns/130ns Switching Energy: 200µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 42 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 88 W |
Produkt ist nicht verfügbar |
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IKB06N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 88W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Turn-on time: 15ns Turn-off time: 188ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |