IKB10N60TATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans IGBT Chip N-CH 600V 20A 110W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.7 EUR |
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Technische Details IKB10N60TATMA1 Infineon Technologies
Description: IGBT 600V 20A 110W TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A, Supplier Device Package: PG-TO263-3-2, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 12ns/215ns, Switching Energy: 430µJ, Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 62 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 110 W.
Weitere Produktangebote IKB10N60TATMA1 nach Preis ab 1.33 EUR bis 2.94 EUR
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 110W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB10N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 18A Power dissipation: 110W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Turn-on time: 20ns Turn-off time: 253ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 780 Stücke: Lieferzeit 7-14 Tag (e) |
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IKB10N60TATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 18A Power dissipation: 110W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Turn-on time: 20ns Turn-off time: 253ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 600V 10A |
auf Bestellung 882 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB10N60TATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB10N60TATMA1 - IGBT, 24 A, 1.5 V, 110 W, 600 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 110W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP IGBT3 Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 24A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 694 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 110000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 110W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 110W Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT 600V 20A 110W TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
Produkt ist nicht verfügbar |
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IKB10N60TATMA1 | Hersteller : Infineon Technologies |
Description: IGBT 600V 20A 110W TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 110 W |
Produkt ist nicht verfügbar |