IKB15N60TATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.05 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details IKB15N60TATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/188ns, Switching Energy: 570µJ, Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 87 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 130 W.
Weitere Produktangebote IKB15N60TATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 28ns Kind of package: reel; tape Case: D2PAK Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 23A Collector-emitter voltage: 600V Power dissipation: 130W Gate charge: 87nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 757 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IKB15N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)