IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 183ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 957 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.53 EUR |
| 18+ | 4.09 EUR |
| 23+ | 3.13 EUR |
| 25+ | 2.96 EUR |
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Technische Details IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES
Description: IGBT TRENCH FS 650V 38A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/160ns, Switching Energy: 560µJ (on), 130µJ (off), Test Condition: 400V, 20A, 32Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 125 W.
Weitere Produktangebote IKB20N65EH5ATMA1 nach Preis ab 2.5 EUR bis 4.88 EUR
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IKB20N65EH5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 183ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 957 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB20N65EH5ATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
auf Bestellung 916 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB20N65EH5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 38A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 560µJ (on), 130µJ (off) Test Condition: 400V, 20A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB20N65EH5ATMA1 | Hersteller : Infineon Technologies |
TRENCHSTOP 5 High speed switching IGBT |
Produkt ist nicht verfügbar |
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IKB20N65EH5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 38A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 560µJ (on), 130µJ (off) Test Condition: 400V, 20A, 32Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 125 W |
Produkt ist nicht verfügbar |