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IKB30N65EH5ATMA1

IKB30N65EH5ATMA1 Infineon Technologies

infineon-ikb30n65eh5-datasheet-v02_01-en.pdf Hersteller: Infineon Technologies
TRENCHSTOP 5 High speed switching IGBT
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+3.1 EUR
50+2.82 EUR
51+2.68 EUR
100+2.39 EUR
250+2.26 EUR
500+2.08 EUR
Mindestbestellmenge: 47
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Technische Details IKB30N65EH5ATMA1 Infineon Technologies

Description: IGBT TRENCH FS 650V 55A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/159ns, Switching Energy: 870µJ (on), 300µJ (off), Test Condition: 400V, 30A, 22Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.

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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies infineon-ikb30n65eh5-datasheet-v02_01-en.pdf TRENCHSTOP 5 High speed switching IGBT
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+3.1 EUR
50+2.82 EUR
51+2.68 EUR
100+2.39 EUR
250+2.26 EUR
500+2.08 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies Infineon_IKB30N65EH5_DataSheet_v02_01_EN-3362062.pdf IGBTs INDUSTRY 14
auf Bestellung 932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5 EUR
10+3.84 EUR
25+3.8 EUR
100+3.13 EUR
250+2.94 EUR
500+2.8 EUR
1000+2.66 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a Description: IGBT TRENCH FS 650V 55A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/159ns
Switching Energy: 870µJ (on), 300µJ (off)
Test Condition: 400V, 30A, 22Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
10+4.91 EUR
100+3.48 EUR
Mindestbestellmenge: 3
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies infineon-ikb30n65eh5-datasheet-v02_01-en.pdf TRENCHSTOP 5 High speed switching IGBT
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies infineon-ikb30n65eh5-datasheet-v02_01-en.pdf TRENCHSTOP 5 High speed switching IGBT
Produkt ist nicht verfügbar
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IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : Infineon Technologies Infineon-IKB30N65EH5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd134705491a Description: IGBT TRENCH FS 650V 55A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/159ns
Switching Energy: 870µJ (on), 300µJ (off)
Test Condition: 400V, 30A, 22Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65EH5ATMA1 IKB30N65EH5ATMA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD6CE2BB7E5820&compId=IKB30N65EH5.pdf?ci_sign=eace35329b7f06d6bcbc499ad2a1ae3d0aff80ac Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 52ns
Turn-off time: 184ns
Pulsed collector current: 120A
Collector current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH