
IKB30N65EH5ATMA1 Infineon Technologies
auf Bestellung 899 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
47+ | 3.18 EUR |
50+ | 2.89 EUR |
51+ | 2.74 EUR |
100+ | 2.44 EUR |
250+ | 2.31 EUR |
500+ | 2.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKB30N65EH5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 55A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 24ns/159ns, Switching Energy: 870µJ (on), 300µJ (off), Test Condition: 400V, 30A, 22Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 188 W.
Weitere Produktangebote IKB30N65EH5ATMA1 nach Preis ab 2.13 EUR bis 7.43 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 899 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/159ns Switching Energy: 870µJ (on), 300µJ (off) Test Condition: 400V, 30A, 22Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
IKB30N65EH5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||||
![]() |
IKB30N65EH5ATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/159ns Switching Energy: 870µJ (on), 300µJ (off) Test Condition: 400V, 30A, 22Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 188 W |
Produkt ist nicht verfügbar |