Produkte > INFINEON TECHNOLOGIES > IKB30N65ES5ATMA1
IKB30N65ES5ATMA1

IKB30N65ES5ATMA1 Infineon Technologies

Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.67 EUR
2000+2.64 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IKB30N65ES5ATMA1 Infineon Technologies

Description: IGBT TRENCH FS 650V 62A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/124ns, Switching Energy: 560µJ (on), 320µJ (off), Test Condition: 400V, 30A, 13Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 62 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 188 W.

Weitere Produktangebote IKB30N65ES5ATMA1 nach Preis ab 2.76 EUR bis 7.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Hersteller : Infineon Technologies Infineon_IKB30N65ES5_DataSheet_v01_10_EN-3362290.pdf IGBTs INDUSTRY 14
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.68 EUR
10+4.35 EUR
100+3.20 EUR
500+2.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Hersteller : Infineon Technologies Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
auf Bestellung 2244 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
10+4.91 EUR
100+3.48 EUR
500+2.87 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Hersteller : Infineon Technologies infineon-ikb30n65es5-datasheet-v02_01-en.pdf Trans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB30N65ES5ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d IKB30N65ES5ATMA1 SMD IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH