IKB40N65EH5ATMA1 Infineon Technologies
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 4.2 EUR |
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Technische Details IKB40N65EH5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 78 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/157ns, Switching Energy: 1.1mJ (on), 400µJ (off), Test Condition: 400V, 40A, 15Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 74 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 250 W.
Weitere Produktangebote IKB40N65EH5ATMA1 nach Preis ab 3.66 EUR bis 9.16 EUR
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IKB40N65EH5ATMA1 | Hersteller : Infineon Technologies |
 IGBT Transistors INDUSTRY 14 |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB40N65EH5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 78 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/157ns Switching Energy: 1.1mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
auf Bestellung 1362 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB40N65EH5ATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65EH5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB40N65EH5ATMA1 - IGBT, 74 A, 1.65 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 74A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1067 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65EH5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKB40N65EH5ATMA1 - IGBT, 74 A, 1.65 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 250W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 74A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 1067 Stücke: Lieferzeit 14-21 Tag (e) |
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IKB40N65EH5ATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 74A 250000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IKB40N65EH5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Turn-on time: 34ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKB40N65EH5ATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 78 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/157ns Switching Energy: 1.1mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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IKB40N65EH5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Turn-on time: 34ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |