IKD03N60RFATMA1 Infineon Technologies
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.29 EUR |
| 25+ | 1.17 EUR |
| 100+ | 0.91 EUR |
| 250+ | 0.89 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.65 EUR |
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Technische Details IKD03N60RFATMA1 Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/128ns, Switching Energy: 50µJ (on), 40µJ (off), Test Condition: 400V, 2.5A, 68Ohm, 15V, Gate Charge: 17.1 nC, Part Status: Active, Current - Collector (Ic) (Max): 6.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 53.6 W.
Weitere Produktangebote IKD03N60RFATMA1 nach Preis ab 1.57 EUR bis 2.5 EUR
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IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
 Description: IGBT TRENCH/FS 600V 6.5A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/128ns Switching Energy: 50µJ (on), 40µJ (off) Test Condition: 400V, 2.5A, 68Ohm, 15V Gate Charge: 17.1 nC Part Status: Active Current - Collector (Ic) (Max): 6.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 7.5 A Power - Max: 53.6 W |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD03N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD03N60RFATMA1 - IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 53.6W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP RC Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 6.5A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD03N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD03N60RFATMA1 - IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 53.6W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP RC Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 6.5A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD03N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 53.6W Case: DPAK Mounting: SMD Gate charge: 17.1nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 6A Pulsed collector current: 7.5A Turn-on time: 17ns Turn-off time: 265ns Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 5A 53600mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH/FS 600V 6.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/128ns Switching Energy: 50µJ (on), 40µJ (off) Test Condition: 400V, 2.5A, 68Ohm, 15V Gate Charge: 17.1 nC Part Status: Active Current - Collector (Ic) (Max): 6.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 7.5 A Power - Max: 53.6 W |
Produkt ist nicht verfügbar |
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IKD03N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 53.6W Case: DPAK Mounting: SMD Gate charge: 17.1nC Kind of package: reel; tape Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Collector current: 6A Pulsed collector current: 7.5A Turn-on time: 17ns Turn-off time: 265ns Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |