IKD03N60RFATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT TRENCH/FS 600V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.51 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKD03N60RFATMA1 Infineon Technologies
Description: IGBT TRENCH/FS 600V 6.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 10ns/128ns, Switching Energy: 50µJ (on), 40µJ (off), Test Condition: 400V, 2.5A, 68Ohm, 15V, Gate Charge: 17.1 nC, Part Status: Active, Current - Collector (Ic) (Max): 6.5 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 7.5 A, Power - Max: 53.6 W.
Weitere Produktangebote IKD03N60RFATMA1 nach Preis ab 0.88 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT w/ INTG DIODE 600V 5A |
auf Bestellung 3385 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
IKD03N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD03N60RFATMA1 - IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 53.6W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 6.5A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 7076 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
IKD03N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD03N60RFATMA1 - IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 53.6W Transistormontage: Oberflächenmontage euEccn: NLR Kontinuierlicher Kollektorstrom: 6.5A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 7356 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
IKD03N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 53.6W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 7.5A Mounting: SMD Gate charge: 17.1nC Kind of package: reel; tape Turn-on time: 17ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 5A 53600mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IKD03N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH/FS 600V 6.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 10ns/128ns Switching Energy: 50µJ (on), 40µJ (off) Test Condition: 400V, 2.5A, 68Ohm, 15V Gate Charge: 17.1 nC Part Status: Active Current - Collector (Ic) (Max): 6.5 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 7.5 A Power - Max: 53.6 W |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IKD03N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 53.6W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 7.5A Mounting: SMD Gate charge: 17.1nC Kind of package: reel; tape Turn-on time: 17ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |