IKD04N60R6EDV1 Infineon Technologies

Description: IGBT WITHOUT ANTI-PARALLEL DIODE, Power - Max: 75 W, Current - Collector Pulsed (Icm): 12 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 8 A, Part Status: Active, Gate Charge: 27 nC, Test Condition: 400V, 4A, 43Ohm, 15V, Switching Energy: 90µJ (on), 150µJ (off), Td (on/off) @ 25°C: 14ns/146ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO252-3-313, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Reverse Recovery Time (trr): 43 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.