Produkte > INFINEON TECHNOLOGIES > IKD04N60RAATMA1
IKD04N60RAATMA1

IKD04N60RAATMA1 Infineon Technologies


IKD04N60RA.pdf Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 4007 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
476+1.11 EUR
Mindestbestellmenge: 476
Produktrezensionen
Produktbewertung abgeben

Technische Details IKD04N60RAATMA1 Infineon Technologies

Description: IGBT TRENCH 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 90µJ (on), 150µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.

Weitere Produktangebote IKD04N60RAATMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IKD04N60RAATMA1 IKD04N60RAATMA1 Hersteller : Infineon Technologies infns26941_1-2271265.pdf IGBT Transistors IGBT PRODUCTS
auf Bestellung 2449 Stücke:
Lieferzeit 10-14 Tag (e)
IKD04N60RAATMA1 IKD04N60RAATMA1 Hersteller : Infineon Technologies ds_ikd04n60ra_2_1.pdf Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IKD04N60RAATMA1 IKD04N60RAATMA1 Hersteller : Infineon Technologies IKD04N60RA.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar