Technische Details IKD04N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 90µJ (on), 150µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.
Weitere Produktangebote IKD04N60RATMA1 nach Preis ab 0.67 EUR bis 3.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IKD04N60RATMA1 | Infineon Technologies |
 Description: IGBT TRENCH FS 600V 8A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/146ns Switching Energy: 90µJ (on), 150µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IKD04N60RATMA1 | Infineon Technologies |
Trans IGBT Chip N-CH 600V 8A 75W 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
IKD04N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ RC Turn-on time: 22ns Turn-off time: 317ns |
auf Bestellung 2449 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
IKD04N60RATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 8A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/146ns Switching Energy: 90µJ (on), 150µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
auf Bestellung 2775 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IKD04N60RATMA1 | Infineon Technologies |
IGBTs IGBT w/ INTG DIODE 600V 8A |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IKD04N60RATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.73 EUR |
| IKD04N60RATMA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 8A 75W 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 600V 8A 75W 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.93 EUR |
| IKD04N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Turn-off time: 317ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Turn-off time: 317ns
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.55 EUR |
| 75+ | 1.14 EUR |
| 106+ | 0.8 EUR |
| 122+ | 0.7 EUR |
| 200+ | 0.68 EUR |
| IKD04N60RATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| IKD04N60RATMA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 8A
IGBTs IGBT w/ INTG DIODE 600V 8A
auf Bestellung 2670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.01 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.82 EUR |
| 2500+ | 0.75 EUR |
| 5000+ | 0.67 EUR |