Produkte > INFINEON TECHNOLOGIES > IKD04N60RATMA1
IKD04N60RATMA1

IKD04N60RATMA1 INFINEON TECHNOLOGIES

IKD04N60R.pdf Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ RC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
75+0.96 EUR
106+0.67 EUR
122+0.59 EUR
200+0.57 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IKD04N60RATMA1 INFINEON TECHNOLOGIES

Description: IGBT TRENCH FS 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 90µJ (on), 150µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.

Weitere Produktangebote IKD04N60RATMA1 nach Preis ab 0.43 EUR bis 2.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IKD04N60RATMA1 IKD04N60RATMA1 Hersteller : Infineon Technologies Infineon_IKD04N60R_DS_v02_05_EN.pdf IGBTs IGBT w/ INTG DIODE 600V 8A
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.76 EUR
10+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
2500+0.45 EUR
5000+0.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60RATMA1 Hersteller : Infineon Technologies Infineon-IKD04N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d927b3e01a0 Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
14+1.28 EUR
100+0.84 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60RATMA1 Hersteller : Infineon Technologies Infineon-IKD04N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5d927b3e01a0 Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH