
IKD04N60RATMA1 Infineon Technologies

Description: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2500+ | 0.56 EUR |
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Technische Details IKD04N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 90µJ (on), 150µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.
Weitere Produktangebote IKD04N60RATMA1 nach Preis ab 0.54 EUR bis 2.11 EUR
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IKD04N60RATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 6432 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD04N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Case: DPAK Mounting: SMD Power dissipation: 75W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 27nC Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 4A Pulsed collector current: 12A Turn-on time: 22ns Turn-off time: 317ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2479 Stücke: Lieferzeit 7-14 Tag (e) |
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IKD04N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Case: DPAK Mounting: SMD Power dissipation: 75W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 27nC Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 4A Pulsed collector current: 12A Turn-on time: 22ns Turn-off time: 317ns Type of transistor: IGBT |
auf Bestellung 2479 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD04N60RATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/146ns Switching Energy: 90µJ (on), 150µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
auf Bestellung 4985 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD04N60RATMA1 | Hersteller : Infineon Technologies |
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