IKD04N60RFATMA1 Infineon Technologies
auf Bestellung 2330 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.51 EUR |
| 27+ | 1.93 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 1.05 EUR |
| 5000+ | 1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKD04N60RFATMA1 Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 12ns/116ns, Switching Energy: 60µJ (on), 50µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.
Weitere Produktangebote IKD04N60RFATMA1 nach Preis ab 1.11 EUR bis 2.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IKD04N60RFATMA1 | Hersteller : Infineon Technologies |
 Description: IGBT TRENCH 600V 8A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/116ns Switching Energy: 60µJ (on), 50µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
auf Bestellung 2439 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
 |
IKD04N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD04N60RFATMA1 - IGBT, 14.2 A, 2.2 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP RC Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 14.2A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
|
|
IKD04N60RFATMA1 | Hersteller : INFINEON |
Description: INFINEON - IKD04N60RFATMA1 - IGBT, 14.2 A, 2.2 V, 75 W, 600 V, TO-252 (DPAK), 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 75W Transistormontage: Oberflächenmontage euEccn: NLR Kontinuierlicher Kollektorstrom: 14.2A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.2V usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| IKD04N60RFATMA1 | Hersteller : Infineon |
|
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
 |
IKD04N60RFATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
 |
IKD04N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
IKD04N60RFATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 600V 8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/116ns Switching Energy: 60µJ (on), 50µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
IKD04N60RFATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |