IKD10N60RATMA1 Infineon Technologies
auf Bestellung 2630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.97 EUR |
| 2500+ | 0.91 EUR |
| 5000+ | 0.85 EUR |
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Technische Details IKD10N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/192ns, Switching Energy: 210µJ (on), 380µJ (off), Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.
Weitere Produktangebote IKD10N60RATMA1 nach Preis ab 0.99 EUR bis 3.19 EUR
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IKD10N60RATMA1 | Hersteller : Infineon Technologies |
 Description: IGBT TRENCH FS 600V 20A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 210µJ (on), 380µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
auf Bestellung 2170 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKD10N60RATMA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R |
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IKD10N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ RC Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 10A Pulsed collector current: 30A Turn-on time: 24ns Turn-off time: 331ns Anzahl je Verpackung: 1 Stücke |
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IKD10N60RATMA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 600V 20A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 210µJ (on), 380µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
Produkt ist nicht verfügbar |
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IKD10N60RATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ RC Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Collector current: 10A Pulsed collector current: 30A Turn-on time: 24ns Turn-off time: 331ns |
Produkt ist nicht verfügbar |