Technische Details IKFW40N60DH3E Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI, Type of transistor: IGBT, Technology: TRENCHSTOP™, Collector-emitter voltage: 600V, Collector current: 28A, Power dissipation: 81W, Case: PG-TO247-3-AI, Gate-emitter voltage: ±20V, Pulsed collector current: 90A, Mounting: THT, Gate charge: 107nC, Kind of package: tube, Turn-on time: 52ns, Turn-off time: 160ns, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKFW40N60DH3E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IKFW40N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 28A Power dissipation: 81W Case: PG-TO247-3-AI Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 107nC Kind of package: tube Turn-on time: 52ns Turn-off time: 160ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKFW40N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 81W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 81W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH