Technische Details IKFW40N60DH3E Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI, Type of transistor: IGBT, Technology: TRENCHSTOP™, Power dissipation: 81W, Case: PG-TO247-3-AI, Mounting: THT, Gate charge: 107nC, Kind of package: tube, Pulsed collector current: 90A, Turn-on time: 52ns, Turn-off time: 160ns, Gate-emitter voltage: ±20V, Collector current: 28A, Collector-emitter voltage: 600V, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKFW40N60DH3E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IKFW40N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 81W Case: PG-TO247-3-AI Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 52ns Turn-off time: 160ns Gate-emitter voltage: ±20V Collector current: 28A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKFW40N60DH3EXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 52ns
Turn-off time: 160ns
Gate-emitter voltage: ±20V
Collector current: 28A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH


