auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 2.31 EUR |
| 25+ | 2.27 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.38 EUR |
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Technische Details IKP08N65H5XKSA1 Infineon Technologies
Description: IGBT 650V 18A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: PG-TO220-3-111, Td (on/off) @ 25°C: 11ns/115ns, Switching Energy: 70µJ (on), 30µJ (off), Test Condition: 400V, 4A, 48Ohm, 15V, Gate Charge: 22 nC, Part Status: Active, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 70 W.
Weitere Produktangebote IKP08N65H5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IKP08N65H5XKSA1 | Hersteller : INFINEON |
 Description: INFINEON - IKP08N65H5XKSA1 - IGBT, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 70W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 8A SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP08N65H5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IKP08N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 70W Case: TO220-3 Mounting: THT Gate charge: 22nC Kind of package: tube Collector current: 18A Pulsed collector current: 24A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKP08N65H5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: PG-TO220-3-111 Td (on/off) @ 25°C: 11ns/115ns Switching Energy: 70µJ (on), 30µJ (off) Test Condition: 400V, 4A, 48Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 70 W |
Produkt ist nicht verfügbar |
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IKP08N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 70W Case: TO220-3 Mounting: THT Gate charge: 22nC Kind of package: tube Collector current: 18A Pulsed collector current: 24A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |