IKP15N65F5XKSA1 Infineon Technologies
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.8 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 1.87 EUR |
| 2500+ | 1.85 EUR |
| 5000+ | 1.81 EUR |
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Technische Details IKP15N65F5XKSA1 Infineon Technologies
Description: IGBT 650V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO220-3, Td (on/off) @ 25°C: 17ns/150ns, Switching Energy: 130µJ (on), 40µJ (off), Test Condition: 400V, 7.5A, 39Ohm, 15V, Gate Charge: 38 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 105 W.
Weitere Produktangebote IKP15N65F5XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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IKP15N65F5XKSA1 | Hersteller : INFINEON |
 Description: INFINEON - IKP15N65F5XKSA1 - IGBT, 15 A, 1.6 V, 105 W, 650 V, TO-220, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.6V usEccn: EAR99 euEccn: NLR Verlustleistung: 105W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP 5 Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 15A SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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IKP15N65F5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 30A 105000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IKP15N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 18A Power dissipation: 52.5W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 38nC Kind of package: tube Manufacturer series: H5 Turn-on time: 24ns Turn-off time: 166ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKP15N65F5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 17ns/150ns Switching Energy: 130µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
Produkt ist nicht verfügbar |
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IKP15N65F5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 18A Power dissipation: 52.5W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 38nC Kind of package: tube Manufacturer series: H5 Turn-on time: 24ns Turn-off time: 166ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |