IKP15N65H5XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
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Technische Details IKP15N65H5XKSA1 Infineon Technologies
Description: IGBT 650V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO220-3, Td (on/off) @ 25°C: 17ns/160ns, Switching Energy: 120µJ (on), 50µJ (off), Test Condition: 400V, 7.5A, 39Ohm, 15V, Gate Charge: 38 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 105 W.
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IKP15N65H5XKSA1 | Hersteller : Infineon Technologies |
IGBTs IGBT PRODUCTS |
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IKP15N65H5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5 Type of transistor: IGBT Power dissipation: 105W Case: TO220-3 Mounting: THT Gate charge: 38nC Kind of package: tube Collector current: 15A Gate-emitter voltage: ±20V Manufacturer series: H5 Pulsed collector current: 45A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
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