IKP15N65H5XKSA1718 Infineon Technologies

Description: INSULATED GATE BIPOLAR TRANSISTO, Power - Max: 105 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 30 A, Part Status: Active, Gate Charge: 38 nC, Test Condition: 400V, 7.5A, 39Ohm, 15V, Switching Energy: 120µJ (on), 50µJ (off), Td (on/off) @ 25°C: 17ns/160ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO220-3-1, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Reverse Recovery Time (trr): 48 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.