IKQ40N120CH3XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
Td (on/off) @ 25°C: 30ns/300ns
Switching Energy: 3.3mJ (on), 1.3mJ (off)
Test Condition: 400V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 205 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 23.66 EUR |
| 30+ | 18.88 EUR |
| 120+ | 16.9 EUR |
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Technische Details IKQ40N120CH3XKSA1 Infineon Technologies
Description: IGBT 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A, Supplier Device Package: PG-TO247-3-46, Td (on/off) @ 25°C: 30ns/300ns, Switching Energy: 3.3mJ (on), 1.3mJ (off), Test Condition: 400V, 40A, 12Ohm, 15V, Gate Charge: 190 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Weitere Produktangebote IKQ40N120CH3XKSA1 nach Preis ab 13.47 EUR bis 23.82 EUR
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IKQ40N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Kind of package: tube Manufacturer series: H3 Turn-on time: 76ns Turn-off time: 331ns Features of semiconductor devices: integrated anti-parallel diode |
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