IKQ75N120CH3XKSA1 Infineon Technologies
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.88 EUR |
| 10+ | 21 EUR |
| 25+ | 19.41 EUR |
| 240+ | 17.42 EUR |
| 1200+ | 16.02 EUR |
| 2640+ | 15.49 EUR |
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Technische Details IKQ75N120CH3XKSA1 Infineon Technologies
Description: IGBT 1200V 150A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A, Supplier Device Package: PG-TO247-3-46, Td (on/off) @ 25°C: 34ns/282ns, Switching Energy: 6.4mJ (on), 2.8mJ (off), Test Condition: 600V, 75A, 6Ohm, 15V, Gate Charge: 370 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 938 W.
Weitere Produktangebote IKQ75N120CH3XKSA1 nach Preis ab 19.72 EUR bis 27.63 EUR
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IKQ75N120CH3XKSA1 | Hersteller : Infineon Technologies |
 Description: IGBT 1200V 150A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A Supplier Device Package: PG-TO247-3-46 Td (on/off) @ 25°C: 34ns/282ns Switching Energy: 6.4mJ (on), 2.8mJ (off) Test Condition: 600V, 75A, 6Ohm, 15V Gate Charge: 370 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 938 W |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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IKQ75N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CH3XKSA1 Produktcode: 162552 |
Transistoren > MOSFET N-CH |
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IKQ75N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 150A 938000mW 3-Pin(3+Tab) TO-247 Tube |
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IKQ75N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 256W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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IKQ75N120CH3XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKQ75N120CH3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 256W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |