| Anzahl | Preis |
|---|---|
| 1+ | 4.47 EUR |
| 10+ | 2.41 EUR |
| 100+ | 1.95 EUR |
| 480+ | 1.56 EUR |
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Technische Details IKW30N65WR5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 39ns/367ns, Switching Energy: 990µJ (on), 330µJ (off), Test Condition: 400V, 15A, 26Ohm, 15V, Gate Charge: 155 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 185 W.
Weitere Produktangebote IKW30N65WR5XKSA1 nach Preis ab 2.04 EUR bis 17.88 EUR
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IKW30N65WR5XKSA1 | Infineon Technologies |
 Description: IGBT TRENCH 650V 60A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 39ns/367ns Switching Energy: 990µJ (on), 330µJ (off) Test Condition: 400V, 15A, 26Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 185 W |
auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3 Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 Technology: TRENCHSTOP™ 5 Kind of package: tube Type of transistor: IGBT Turn-on time: 51ns Gate charge: 155nC Turn-off time: 376ns Mounting: THT Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 75W Pulsed collector current: 90A Collector-emitter voltage: 650V |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKW30N65WR5XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.68 EUR |
| 30+ | 2.52 EUR |
| 120+ | 2.04 EUR |
| IKW30N65WR5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 5
Kind of package: tube
Type of transistor: IGBT
Turn-on time: 51ns
Gate charge: 155nC
Turn-off time: 376ns
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 75W
Pulsed collector current: 90A
Collector-emitter voltage: 650V
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |