IKW40N120CS7XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
Description: IGBT TRENCH FS 1200V 82A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/190ns
Switching Energy: 2.55mJ (on), 1.75mJ (off)
Test Condition: 600V, 40A, 4Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 357 W
auf Bestellung 207 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 18.43 EUR |
30+ | 14.72 EUR |
120+ | 13.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKW40N120CS7XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 1200V 82A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 175 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/190ns, Switching Energy: 2.55mJ (on), 1.75mJ (off), Test Condition: 600V, 40A, 4Ohm, 15V, Gate Charge: 230 nC, Part Status: Active, Current - Collector (Ic) (Max): 82 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 357 W.
Weitere Produktangebote IKW40N120CS7XKSA1 nach Preis ab 10.04 EUR bis 18.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IKW40N120CS7XKSA1 | Hersteller : Infineon Technologies | IGBT Transistors INDUSTRY 14 |
auf Bestellung 281 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKW40N120CS7XKSA1 - IGBT, 82 A, 1.65 V, 357 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 357W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 82A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : Infineon Technologies | IGBT7 S7 with Anti-parallel Diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : Infineon Technologies | IGBT7 S7 with Anti-parallel Diode |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : Infineon Technologies | SP005415716 |
Produkt ist nicht verfügbar |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : Infineon Technologies | IGBT7 S7 with Anti-parallel Diode |
Produkt ist nicht verfügbar |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
IKW40N120CS7XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 56A Power dissipation: 179W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 230nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.5µs Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |