 
IKW50N60DTPXKSA1 Infineon Technologies
auf Bestellung 9595 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 49+ | 2.97 EUR | 
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Technische Details IKW50N60DTPXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/215ns, Switching Energy: 1.53mJ (on), 850µJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 249 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 319.2 W. 
Weitere Produktangebote IKW50N60DTPXKSA1 nach Preis ab 1.76 EUR bis 6.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IKW50N60DTPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |  Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 61A Power dissipation: 159.6W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 249nC Kind of package: tube Turn-on time: 50ns Turn-off time: 233ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | auf Bestellung 499 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IKW50N60DTPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |  Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 61A Power dissipation: 159.6W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 249nC Kind of package: tube Turn-on time: 50ns Turn-off time: 233ns Features of semiconductor devices: integrated anti-parallel diode | auf Bestellung 499 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  IGBTs INDUSTRY 14 | auf Bestellung 268 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 9595 Stücke:Lieferzeit 14-21 Tag (e) | 
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|   | IKW50N60DTPXKSA1 | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - IKW50N60DTPXKSA1 - IKW50N60 DISCRETE IGBT WITH ANTI-PARALL tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 8 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||
|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 25 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||
|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 25 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||||
|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Trans IGBT Chip N-CH 600V 100A 333000mW 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||
|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Trans IGBT Chip N-CH 600V 100A 319.2W 3-Pin(3+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||
|   | IKW50N60DTPXKSA1 | Hersteller : Infineon Technologies |  Description: IGBT TRENCH FS 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/215ns Switching Energy: 1.53mJ (on), 850µJ (off) Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 249 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 319.2 W | Produkt ist nicht verfügbar |