IKW50N65EH5XKSA1 Infineon Technologies
auf Bestellung 162 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 9.27 EUR |
| 21+ | 7.47 EUR |
| 25+ | 6.72 EUR |
| 100+ | 5.14 EUR |
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Technische Details IKW50N65EH5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 81 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 25ns/172ns, Switching Energy: 1.5mJ (on), 500µJ (off), Test Condition: 400V, 50A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 275 W.
Weitere Produktangebote IKW50N65EH5XKSA1 nach Preis ab 4.63 EUR bis 11.26 EUR
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 80A 275W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 25ns/172ns Switching Energy: 1.5mJ (on), 500µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 275 W |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 80A 275W 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 80A 275000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW50N65EH5XKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 80A 275W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW50N65EH5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Manufacturer series: H5 Turn-on time: 54ns Turn-off time: 207ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKW50N65EH5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 138W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Manufacturer series: H5 Turn-on time: 54ns Turn-off time: 207ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |