IKZ50N65NH5XKSA Infineon Technologies

Description: IKZ50N65 - DISCRETE IGBT WITH AN, Power - Max: 273 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 85 A, Part Status: Active, Gate Charge: 109 nC, Test Condition: 400V, 25A, 15Ohm, 15V, Switching Energy: 350µJ (on), 200µJ (off), Td (on/off) @ 25°C: 22ns/252ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-4-1, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Reverse Recovery Time (trr): 46 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk.