IKZ50N65NH5XKSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IKZ50N65NH5XKSA1 - IKZ50N65 DISCRETE IGBT WITH ANTI-PARALL
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IKZ50N65NH5XKSA1 ROCHESTER ELECTRONICS
Description: IGBT 650V 50A CO-PACK TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 46 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/252ns, Switching Energy: 350µJ (on), 200µJ (off), Test Condition: 400V, 25A, 15Ohm, 15V, Gate Charge: 109 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 273 W.
Weitere Produktangebote IKZ50N65NH5XKSA1
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IKZ50N65NH5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 30ns Turn-off time: 275ns Anzahl je Verpackung: 1 Stücke |
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IKZ50N65NH5XKSA1 | Hersteller : Infineon Technologies |
Description: IGBT 650V 50A CO-PACK TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 22ns/252ns Switching Energy: 350µJ (on), 200µJ (off) Test Condition: 400V, 25A, 15Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
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IKZ50N65NH5XKSA1 | Hersteller : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
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IKZ50N65NH5XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 Technology: TRENCHSTOP™ 5 Turn-on time: 30ns Turn-off time: 275ns |
Produkt ist nicht verfügbar |