IKZ75N65ES5 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4, Type of transistor: IGBT, Technology: TRENCHSTOP™ 5, Power dissipation: 197W, Case: TO247-4, Mounting: THT, Gate charge: 164nC, Kind of package: tube, Turn-on time: 71ns, Turn-off time: 427ns, Gate-emitter voltage: ±20V, Collector current: 80A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 300A.