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Technische Details IKZ75N65ES5 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4, Type of transistor: IGBT, Technology: TRENCHSTOP™ 5, Case: TO247-4, Mounting: THT, Kind of package: tube, Pulsed collector current: 300A, Turn-on time: 71ns, Turn-off time: 427ns, Gate-emitter voltage: ±20V, Collector current: 80A, Collector-emitter voltage: 650V, Power dissipation: 197W, Gate charge: 164nC, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKZ75N65ES5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IKZ75N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Case: TO247-4 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 71ns Turn-off time: 427ns Gate-emitter voltage: ±20V Collector current: 80A Collector-emitter voltage: 650V Power dissipation: 197W Gate charge: 164nC Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKZ75N65ES5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 164nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 71ns
Turn-off time: 427ns
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 164nC
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


