IKZA75N65EH7XKSA1 INFINEON
Hersteller: INFINEON
Description: INFINEON - IKZA75N65EH7XKSA1 - IGBT, 80 A, 1.4 V, 338 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.4V
Verlustleistung: 338W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: TRENCHSTOP IGBT7 Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
| Anzahl | Privatkunde |
|---|---|
| 14+ | 18.31 EUR |
| 18+ | 13.51 EUR |
| 24+ | 9.23 EUR |
| 50+ | 8.48 EUR |
| 100+ | 7.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IKZA75N65EH7XKSA1 INFINEON
Description: IGBT TRENCH FS 650V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 56 ns, Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A, Supplier Device Package: PG-TO247-4-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/199ns, Switching Energy: 750µJ (on), 840µJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 152 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 338 W.
Weitere Produktangebote IKZA75N65EH7XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IKZA75N65EH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 56 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/199ns Switching Energy: 750µJ (on), 840µJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 152 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 338 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IKZA75N65EH7XKSA1 | Infineon Technologies |
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKZA75N65EH7XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 80A; 338W; TO247-4 Type of transistor: IGBT Technology: Field Stop; Trench Power dissipation: 338W Case: TO247-4 Mounting: THT Gate charge: 152nC Gate-emitter voltage: ±20V Collector current: 80A Collector-emitter voltage: 650V Pulsed collector current: 300A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKZA75N65EH7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 56 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/199ns
Switching Energy: 750µJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 152 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 338 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 56 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/199ns
Switching Energy: 750µJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 152 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 338 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZA75N65EH7XKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKZA75N65EH7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 338W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 338W
Case: TO247-4
Mounting: THT
Gate charge: 152nC
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Pulsed collector current: 300A
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 338W; TO247-4
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 338W
Case: TO247-4
Mounting: THT
Gate charge: 152nC
Gate-emitter voltage: ±20V
Collector current: 80A
Collector-emitter voltage: 650V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH