
IMB10AT110 Rohm Semiconductor

Description: TRANS PREBIAS DUAL PNP SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IMB10AT110 Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SMT6, Part Status: Active.
Weitere Produktangebote IMB10AT110 nach Preis ab 0.16 EUR bis 0.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IMB10AT110 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMT6 Part Status: Active |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
IMB10AT110 | Hersteller : ROHM Semiconductor |
![]() |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
IMB10AT110 |
![]() |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
![]() |
IMB10AT110 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SC74; SOT457 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
IMB10AT110 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SC74; SOT457 Mounting: SMD |
Produkt ist nicht verfügbar |