IMB9AT110 Rohm Semiconductor


EMB9, IMB9A,UMB9N.pdf
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.25 EUR
6000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IMB9AT110 Rohm Semiconductor

Description: TRANS PREBIAS DUAL PNP SMT6, Part Status: Not For New Designs, Supplier Device Package: SMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).

Weitere Produktangebote IMB9AT110 nach Preis ab 0.27 EUR bis 0.88 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IMB9AT110 IMB9AT110 Rohm Semiconductor EMB9, IMB9A,UMB9N.pdf Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.88 EUR
30+0.71 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.27 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMB9AT110 IMB9AT110 ROHM Semiconductor IMB9AT110-Rohm-datasheet-83458-1201536.pdf Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IMB9AT110 EMB9, IMB9A,UMB9N.pdf
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
30+0.71 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.27 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMB9AT110 IMB9AT110-Rohm-datasheet-83458-1201536.pdf
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH