IMB9AT110 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details IMB9AT110 Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6, Part Status: Not For New Designs, Supplier Device Package: SMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).
Weitere Produktangebote IMB9AT110 nach Preis ab 0.27 EUR bis 0.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMB9AT110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT6Part Status: Not For New Designs Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
auf Bestellung 6059 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
IMB9AT110 | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IMB9AT110 |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT6
Part Status: Not For New Designs
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.27 EUR |
| IMB9AT110 |
![]() |
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)


