IMB9AT110

IMB9AT110 Rohm Semiconductor


EMB9, IMB9A,UMB9N.pdf Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 3000
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Technische Details IMB9AT110 Rohm Semiconductor

Description: TRANS PREBIAS DUAL PNP SMT6, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SMT6, Part Status: Not For New Designs.

Weitere Produktangebote IMB9AT110 nach Preis ab 0.34 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IMB9AT110 IMB9AT110 Hersteller : Rohm Semiconductor EMB9, IMB9A,UMB9N.pdf Description: TRANS PREBIAS DUAL PNP SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMT6
Part Status: Not For New Designs
auf Bestellung 6059 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
30+ 0.89 EUR
100+ 0.6 EUR
500+ 0.45 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 24
IMB9AT110 IMB9AT110 Hersteller : ROHM Semiconductor IMB9AT110-Rohm-datasheet-83458-1201536.pdf Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)