IMBF170R1K0M1XTMA1 Infineon Technologies

Description: SICFET N-CH 1700V 5.2A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.1mA, Supplier Device Package: PG-TO263-7-13, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V.